Low Temperature (&lt; 130<sup>o</sup>C) Formation of Crystalline Ge Film on Insulator by Stress Stimulated GILC

T. Nishijima

doi:https://doi.org/10.7567/SSDM.2019.F-6-04

11:15 〜 11:30

[F-6-04] Low Temperature (< 130^oC) Formation of Crystalline Ge Film on Insulator by Stress Stimulated GILC

^○T. Nishijima¹, K. Kusano¹, K. Kudo¹, M. Furuta², Y. Kusuda², S. Motoyama², N. Naka³, T. Numata⁴, I. Tsunoda¹ (1.National Inst. of Tech., Kumamoto College (Japan), 2.SAMCO Inc. (Japan), 3.HORIBA Ltd. (Japan), 4.HORIBA TECHNO SERVICE Co., Ltd (Japan))

https://doi.org/10.7567/SSDM.2019.F-6-04

2019 International Conference on Solid State Devices and Materials

[F-6-04] Low Temperature (< 130oC) Formation of Crystalline Ge Film on Insulator by Stress Stimulated GILC

[F-6-04] Low Temperature (< 130^oC) Formation of Crystalline Ge Film on Insulator by Stress Stimulated GILC