11:30 〜 11:45

[F-6-05] Strain Relaxation Enhancement of Ge_1−x−ySi_xSn_y Epitaxial Layer on Ge Substrate Using Ion-Implantation Method

^○H. Sofue¹, M. Fukuda¹, S. Shibayama¹, S. Zaima^1,2, O. Nakatsuka^1,3 (1.Nagoya Univ. (Japan), 2.Meijo Univ. (Japan), 3.IMaSS, Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.F-6-05