The Japan Society of Applied Physics

11:30 〜 11:45

[F-6-05] Strain Relaxation Enhancement of Ge1−xySixSny Epitaxial Layer on Ge Substrate Using Ion-Implantation Method

H. Sofue1, M. Fukuda1, S. Shibayama1, S. Zaima1,2, O. Nakatsuka1,3 (1.Nagoya Univ. (Japan), 2.Meijo Univ. (Japan), 3.IMaSS, Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.F-6-05