Endurance Improvement in Ferroelectric Y-doped HfO<sub>2</sub> Thin Films on NiSi<sub>2</sub> with Low-Thermal Budget Processing

J. Molina Reyes

doi:https://doi.org/10.7567/SSDM.2019.H-2-01

3:45 PM - 4:00 PM

[H-2-01] Endurance Improvement in Ferroelectric Y-doped HfO₂ Thin Films on NiSi₂ with Low-Thermal Budget Processing

^○J. Molina Reyes^1,2, T. Hoshii¹, S.-I. Ohmi¹, H. Funakubo¹, A. Hori¹, I. Fujiwara¹, H. Wakabayashi¹, K. Tsutsui¹, K. Kakushima¹ (1.Tokyo Tech (Japan), 2.Nat. Inst. of Astro. Opt. and Elect. (Mexico))

https://doi.org/10.7567/SSDM.2019.H-2-01

2019 International Conference on Solid State Devices and Materials

[H-2-01] Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing

[H-2-01] Endurance Improvement in Ferroelectric Y-doped HfO₂ Thin Films on NiSi₂ with Low-Thermal Budget Processing