Thickness- and orientation-dependence of Curie temperature of ferroelectric epitaxial HfO<sub>2</sub> based films

T. Mimura

doi:https://doi.org/10.7567/SSDM.2019.H-2-04

16:30 〜 16:45

[H-2-04] Thickness- and orientation-dependence of Curie temperature of ferroelectric epitaxial HfO₂ based films

^○T. Mimura¹, T. Shimizu¹, Y. Katsuya², O. Sakata³, H. Funakubo¹ (1.Tokyo Institute of Technology (Japan), 2.Synchrotron X-ray Station at SPring-8, Research Network and Facility Services Division (Japan), 3.Synchrotron X-ray Group, Research Center for Advanced Measurement and Characterization, NIMS and Synchrotron X-ray Station at SPring-8, Research Network and Facility Services Division (Japan))

https://doi.org/10.7567/SSDM.2019.H-2-04

2019 International Conference on Solid State Devices and Materials

[H-2-04] Thickness- and orientation-dependence of Curie temperature of ferroelectric epitaxial HfO2 based films

[H-2-04] Thickness- and orientation-dependence of Curie temperature of ferroelectric epitaxial HfO₂ based films