4:45 PM - 5:00 PM

[H-2-05] Memory Window and Endurance Improvement of HfZrO Based FeFETs with ZrO₂ Seed Layers

^○W. Xiao¹, C. Liu¹, Y. Peng², S. Zheng¹, C. Zhang², J. Zhang², Y. Hao², M. Liao¹, Y. Zhou¹ (1.Xiangtan Univ. (China), 2.Xidian Univ. (China))

https://doi.org/10.7567/SSDM.2019.H-2-05