Polarization Dependency of Time-Dependent Dielectric Breakdown (TDDB)Characteristics in Ferroelectric HfZrO<sub>x</sub>

T.-H. Yang

doi:https://doi.org/10.7567/SSDM.2019.H-2-06

17:00 〜 17:15

[H-2-06] Polarization Dependency of Time-Dependent Dielectric Breakdown (TDDB)Characteristics in Ferroelectric HfZrO_x

^○T.-H. Yang¹, C.-J. Su², Y.-S. Wang³, K.-H. Kao³, Y.-J. Lee², T.-L. Wu¹ (1.National Chiao Tung Univ. (Taiwan), 2.Taiwan Semiconductor Res. Inst. (Taiwan), 3.National Cheng Kung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2019.H-2-06

2019 International Conference on Solid State Devices and Materials

[H-2-06] Polarization Dependency of Time-Dependent Dielectric Breakdown (TDDB)Characteristics in Ferroelectric HfZrOx

[H-2-06] Polarization Dependency of Time-Dependent Dielectric Breakdown (TDDB)Characteristics in Ferroelectric HfZrO_x