9:30 AM - 9:45 AM

[H-3-02] A Simulation Study on Hf-based Ferroelectric FET Memory Performance

^○K. Takeuchi¹, M. Kobayashi¹, T. Hiramoto¹ (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2019.H-3-02