Uniformity Characterization of Printed Schottky Contacts Formed on n-GaN Epitaxial Layers by Using Ag Nanoink

K. Shiojima

doi:https://doi.org/10.7567/SSDM.2019.J-6-02

11:00 〜 11:15

[J-6-02] Uniformity Characterization of Printed Schottky Contacts Formed on n-GaN Epitaxial Layers by Using Ag Nanoink

^○K. Shiojima¹, Y. Kashiwagi², A. Koizumi³, M. Saitoh², T. Tamai², Y. Fujiwara³ (1.Univ. of Fukui (Japan), 2.Osaka Res. Insti. of Indus. Sci. and Tech. (Japan), 3.Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.J-6-02

2019 International Conference on Solid State Devices and Materials

[J-6-02] Uniformity Characterization of Printed Schottky Contacts Formed on n-GaN Epitaxial Layers by Using Ag Nanoink