High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow Beveled-Mesa Structure Combined with Lightly Mg-Doped p-Layers

T. Maeda

doi:https://doi.org/10.7567/SSDM.2019.K-1-05

15:15 〜 15:30

[K-1-05] High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow Beveled-Mesa Structure Combined with Lightly Mg-Doped p-Layers

^○T. Maeda¹, T. Narita², H. Ueda², M. Kanechika², T. Uesugi², T. Kachi³, M. Horita^1,3, T. Kimoto¹, J. Suda^1,3 (1.Kyoto Univ. (Japan), 2.Toyota Central R&D Labs., Inc. (Japan), 3.Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.K-1-05

2019 International Conference on Solid State Devices and Materials

[K-1-05] High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow Beveled-Mesa Structure Combined with Lightly Mg-Doped p-Layers