The Japan Society of Applied Physics

15:15 〜 15:30

[K-1-05] High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow Beveled-Mesa Structure Combined with Lightly Mg-Doped p-Layers

T. Maeda1, T. Narita2, H. Ueda2, M. Kanechika2, T. Uesugi2, T. Kachi3, M. Horita1,3, T. Kimoto1, J. Suda1,3 (1.Kyoto Univ. (Japan), 2.Toyota Central R&D Labs., Inc. (Japan), 3.Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.K-1-05