The Japan Society of Applied Physics

16:00 〜 16:15

[K-4-02] Low Turn-on Voltage and High Breakdown GaN Schottky Barrier Diodes for RF Energy Harvesting Applications

C.-H. Li1,H. Wang1, Y. Liu1, S.D. Joseph2, Y. Huang2, S.S.H. Hsu1 (1.National Tsing Hua Univ. (Taiwan), 2.Univ. of Liverpool (UK))

https://doi.org/10.7567/SSDM.2019.K-4-02