16:15 〜 16:30

[K-4-03] Gallium-nitride-based Heterojunction Bipolar Transistors with Two-dimensional Hole Gas Fabricated by Epitaxial Lift-off Process

^○T. Kumabe¹, M. Ogura¹, A. Tanaka^2,3, Y. Ando¹, H. Watanabe², S. Usami¹, M. Deki², S. Nitta², Y. Honda², H. Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ. (Japan), 2.IMaSS, Nagoya Univ. (Japan), 3.NIMS (Japan), 4.VBL, Nagoya Univ. (Japan), 5.ARC, Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.K-4-03