10:00 〜 10:15

[K-5-04] Impact of Post Deposition Annealing on Chemical Bonding Features and Filled Electronic Defects of AlSiO/GaN(0001) Structure

^○A. Ohta¹, D. Kikuta², T. Narita², K. Itoh², K. Makihara¹, T. Kachi¹, S. Miyazaki¹ (1.Nagoya Univ. (Japan), 2.Toyota Central R&D Labs. Inc. (Japan))

https://doi.org/10.7567/SSDM.2019.K-5-04