The Japan Society of Applied Physics

10:30 〜 11:00

[K-6-01 (Invited)] Carrier Scattering Mechanism in SiC Trench MOSFETs

K. Kutsuki1, E. Kagoshima2, T. Onishi2, J. Saito2, K. Yamamoto3, Y. Watanabe1 (1.Toyota Central R&D Labs., Inc. (Japan), 2.TOYOTA MOTOR CORP. (Japan), 3.DENSO CORP. (Japan))

https://doi.org/10.7567/SSDM.2019.K-6-01