Carrier Scattering Mechanism in SiC Trench MOSFETs

K. Kutsuki

doi:https://doi.org/10.7567/SSDM.2019.K-6-01

10:30 〜 11:00

[K-6-01 (Invited)] Carrier Scattering Mechanism in SiC Trench MOSFETs

^○K. Kutsuki¹, E. Kagoshima², T. Onishi², J. Saito², K. Yamamoto³, Y. Watanabe¹ (1.Toyota Central R&D Labs., Inc. (Japan), 2.TOYOTA MOTOR CORP. (Japan), 3.DENSO CORP. (Japan))

https://doi.org/10.7567/SSDM.2019.K-6-01

2019 International Conference on Solid State Devices and Materials

[K-6-01 (Invited)] Carrier Scattering Mechanism in SiC Trench MOSFETs