The Japan Society of Applied Physics

11:00 〜 11:15

[K-6-02] Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET

W. Takeuchi1,2, K. Kutsuki3, E. Kagoshima4, T. Onishi4, S. Iwasaki4, M. Sakashita2, H. Fujiwara4, O. Nakatsuka2 (1.Aichi Institute of Tech. (Japan), 2.Nagoya Univ. (Japan), 3.Toyota Central R&D LABS., INC (Japan), 4.TOYOTA MOTOR CORP. (Japan))

https://doi.org/10.7567/SSDM.2019.K-6-02