Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET

W. Takeuchi

doi:https://doi.org/10.7567/SSDM.2019.K-6-02

11:00 〜 11:15

[K-6-02] Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET

^○W. Takeuchi^1,2, K. Kutsuki³, E. Kagoshima⁴, T. Onishi⁴, S. Iwasaki⁴, M. Sakashita², H. Fujiwara⁴, O. Nakatsuka² (1.Aichi Institute of Tech. (Japan), 2.Nagoya Univ. (Japan), 3.Toyota Central R&D LABS., INC (Japan), 4.TOYOTA MOTOR CORP. (Japan))

https://doi.org/10.7567/SSDM.2019.K-6-02

2019 International Conference on Solid State Devices and Materials

[K-6-02] Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET