In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al<sub>2</sub>O<sub>3</sub>/4H-SiC(0001) Gate Stacks

T. Doi

doi:https://doi.org/10.7567/SSDM.2019.K-6-03

11:15 〜 11:30

[K-6-03] In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al₂O₃/4H-SiC(0001) Gate Stacks

^○T. Doi^1,2, S. Shibayama¹, W. Takeuchi^1,3, M. Sakashita¹, N. Taoka¹, M. Shimizu², O. Nakatsuka¹ (1.Nagoya Univ. (Japan), 2.AIST-NU GaN-OIL (Japan), 3.Aichi Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2019.K-6-03

2019 International Conference on Solid State Devices and Materials

[K-6-03] In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al2O3/4H-SiC(0001) Gate Stacks

[K-6-03] In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al₂O₃/4H-SiC(0001) Gate Stacks