The Japan Society of Applied Physics

11:15 〜 11:30

[K-6-03] In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al2O3/4H-SiC(0001) Gate Stacks

T. Doi1,2, S. Shibayama1, W. Takeuchi1,3, M. Sakashita1, N. Taoka1, M. Shimizu2, O. Nakatsuka1 (1.Nagoya Univ. (Japan), 2.AIST-NU GaN-OIL (Japan), 3.Aichi Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2019.K-6-03