11:45 〜 12:00

[K-6-05] Investigation of the Possible Origins of Lattice Distortion at the Surface of Thermally-Oxidized 4H-SiC (0001) based on the Physical Analysis of Remained Byproducts

^○A.D. Hatmanto¹, K. Kita¹ (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2019.K-6-05