1:30 PM - 1:45 PM

[K-7-02] High-Resolution Observation of In-Plane Carrier Concentration Nonuniformity in Vertical GaN p-n Diode Using Franz-Keldysh Effect and Avalanche Multiplication

^○S. Kawasaki¹, H. Fukushima¹, S. Usami¹, Y. Ando¹, A. Tanaka², M. Deki³, M. Kushimoto¹, S. Nitta³, Y. Honda³, H. Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ. (Japan), 2.NIMS (Japan), 3.IMaSS, Nagoya Univ. (Japan), 4.VBL, Nagoya Univ. (Japan), 5.Akasaki R.C., Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.K-7-02