Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy

K. Kanegae

doi:https://doi.org/10.7567/SSDM.2019.K-7-04

14:00 〜 14:15

[K-7-04] Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy

^○K. Kanegae¹, T. Narita², K. Tomita², T. Kachi³, M. Horita^3,1, T. Kimoto¹, J. Suda^1,3 (1.Kyoto Univ. (Japan), 2.Toyota Central R&D Labs. (Japan), 3.Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.K-7-04

2019 International Conference on Solid State Devices and Materials

[K-7-04] Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy