14:15 〜 14:30

[K-7-05] Microscopic Reason for the Leakage Current due to the Mg-Attached Dislocation in GaN

^○T. Nakano¹, K. Chokawa¹, Y. Harashima², M. Araidai^2,1, K. Shiraishi^2,1, A. Oshiyama², A. Kusaba³, Y. Kangawa^4,2, A. Tanaka², Y. Honda^2,1, H. Amano^2,1 (1.Graduate School of Engineerging, Nagoya Univ. (Japan), 2.Institute of Materials and Systems for Sustainability, Nagoya Univ. (Japan), 3.Computer Centre, Gakushuin Univ. (Japan), 4.Research Institute for Applied Mechanics, Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.K-7-05