The Japan Society of Applied Physics

15:45 〜 16:00

[N-2-01] Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs

S.E. Tyaginov1,2,3, A.V. Chasin1, A. Makarov2, A.-M. El-Sayed2, M. Jech2, A. De Keersgieter1, G. Eneman1, M. Vandemaele1, J. Franco1, D. Linten1, B. Kaczer1 (1.Imec (Belgium), 2.Tech. Univ. Vienna (Austria), 3.A.F. Ioffe Phys.-Tech. Inst. (Russia))

https://doi.org/10.7567/SSDM.2019.N-2-01