Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs

S.E. Tyaginov

doi:https://doi.org/10.7567/SSDM.2019.N-2-01

15:45 〜 16:00

[N-2-01] Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs

^○S.E. Tyaginov^1,2,3, A.V. Chasin¹, A. Makarov², A.-M. El-Sayed², M. Jech², A. De Keersgieter¹, G. Eneman¹, M. Vandemaele¹, J. Franco¹, D. Linten¹, B. Kaczer¹ (1.Imec (Belgium), 2.Tech. Univ. Vienna (Austria), 3.A.F. Ioffe Phys.-Tech. Inst. (Russia))

https://doi.org/10.7567/SSDM.2019.N-2-01

2019 International Conference on Solid State Devices and Materials

[N-2-01] Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs