Impact of Germanium Concentration on the Ultraviolet Nanosecond Laser Annealing of Intrinsic Si<sub>1-x</sub>Ge<sub>x </sub>Epitaxial Layers

L. Dagault

doi:https://doi.org/10.7567/SSDM.2019.N-2-02

16:00 〜 16:15

[N-2-02] Impact of Germanium Concentration on the Ultraviolet Nanosecond Laser Annealing of Intrinsic Si_1-xGe_xEpitaxial Layers

^○L. Dagault^1,2, S. Kerdilès¹, P. Acosta-Alba¹, J.-M. Hartmann¹, J.-P. Barnes¹, P. Gergaud¹, F. Cristiano² (1.CEA-LETI, Univ. Grenoble Alpes (France), 2.LAAS-CNRS, Univ. Toulouse (France))

https://doi.org/10.7567/SSDM.2019.N-2-02

2019 International Conference on Solid State Devices and Materials

[N-2-02] Impact of Germanium Concentration on the Ultraviolet Nanosecond Laser Annealing of Intrinsic Si1-xGex Epitaxial Layers

[N-2-02] Impact of Germanium Concentration on the Ultraviolet Nanosecond Laser Annealing of Intrinsic Si_1-xGe_xEpitaxial Layers