Selective epitaxial p-SiGe Source-Drain Contacts: Low Contact Resistivity (1.5x10<sup>-9</sup> ohm.cm<sup>2</sup>) by Optimizing Strain and Doping Concentration

C. Porret

doi:https://doi.org/10.7567/SSDM.2019.N-5-04

10:00 AM - 10:15 AM

[N-5-04] Selective epitaxial p-SiGe Source-Drain Contacts: Low Contact Resistivity (1.5x10^-9 ohm.cm²) by Optimizing Strain and Doping Concentration

^○C. Porret¹, Y.H. Huang^1,2,3, G. Rengo^1,3, H. Yu¹, M. Schaekers¹, J.-L. Everaert¹, M. Heyns^1,3, A. Vohra^1,3, A. Hikavyy¹, E. Rosseel¹, R. Langer¹, R. Loo¹ (1.imec vzw (Belgium), 2.National Tsing Hua Univ. (Taiwan), 3.K.U. Leuven (Belgium))

https://doi.org/10.7567/SSDM.2019.N-5-04

2019 International Conference on Solid State Devices and Materials

[N-5-04] Selective epitaxial p-SiGe Source-Drain Contacts: Low Contact Resistivity (1.5x10-9 ohm.cm2) by Optimizing Strain and Doping Concentration

[N-5-04] Selective epitaxial p-SiGe Source-Drain Contacts: Low Contact Resistivity (1.5x10^-9 ohm.cm²) by Optimizing Strain and Doping Concentration