The Japan Society of Applied Physics

11:15 〜 11:30

[N-6-04] Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs

A. Makarov1, B. Kaczer2, P. Roussel2, A. Chasin2, M. Vandemaele2, G. Hellings2, A.-M. El-Sayed1, M. Jech1, T. Grasser1, D. Linten2, S. Tyaginov1,2 (1.TU Wien (Austria), 2.imec (Belgium))

https://doi.org/10.7567/SSDM.2019.N-6-04