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[PS-1-04] Systematic analysis of electron traps of HfSiON/SiO₂ nMOSFETs using TSCIS

^○G. Roh¹, H. Kim¹, Y. Kwon², B. Kang¹ (1.Pohang Univ. of Sci. and Tech. (Korea), 2.Univ. of Uiduk (Korea))

https://doi.org/10.7567/SSDM.2019.PS-1-04