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[PS-1-07] The Evaluation of PtHfSi/n-Si(100) Schottky Barrier Height by Boron Dopant Segregation with Short Annealing Duration

^○R.M.D. Mailig¹, M.G. Kim¹, S. Ohmi¹ (1.Tokyo Tech (Japan))

https://doi.org/10.7567/SSDM.2019.PS-1-07