Influence of Dopant on Thermoelectric Properties of Si-rich Poly-Si1-xSnx Layers Grown on Insulators

K. Sato

doi:https://doi.org/10.7567/SSDM.2019.PS-11-06

1:00 PM - 3:00 PM

[PS-11-06] Influence of Dopant on Thermoelectric Properties of Si-rich Poly-Si_1-_xSn_x Layers Grown on Insulators

^○K. Sato¹, O. Nakatsuka^1,2, M. Kurosawa^1,3,4 (1.Grad. Sch. Eng., Nagoya Univ. (Japan), 2.IMaSS, Nagoya Univ. (Japan), 3.IAR, Nagoya Univ. (Japan), 4.JST-PRESTO (Japan))

https://doi.org/10.7567/SSDM.2019.PS-11-06

2019 International Conference on Solid State Devices and Materials

[PS-11-06] Influence of Dopant on Thermoelectric Properties of Si-rich Poly-Si1-xSnx Layers Grown on Insulators

[PS-11-06] Influence of Dopant on Thermoelectric Properties of Si-rich Poly-Si_1-_xSn_x Layers Grown on Insulators