Hydride Vapor Phase Epitaxy Reactor for Bulk GaN Substrate Manufacturing

V. Voronenkov

doi:https://doi.org/10.7567/SSDM.2019.PS-11-11

1:00 PM - 3:00 PM

[PS-11-11] Hydride Vapor Phase Epitaxy Reactor for Bulk GaN Substrate Manufacturing

^○V. Voronenkov^1,2, N. Bochkareva¹, R. Gorbunov^1,2, A. Zubrilov^1,2, V. Kogotkov², P. Latyshev², Y. Lelikov^1,2, A. Leonidov², Y. Shreter^2,1 (1.Ioffe Institute (Russia), 2.TRINITRI-Technology (Russia))

https://doi.org/10.7567/SSDM.2019.PS-11-11

2019 International Conference on Solid State Devices and Materials

[PS-11-11] Hydride Vapor Phase Epitaxy Reactor for Bulk GaN Substrate Manufacturing