Impact of Low Temperature Formed GeOx/Al2O3 Tunneling Layer on Reliability of Junctionless Poly-Ge Charge-Trapping Flash Memory Device

T.-Y. Chiang

doi:https://doi.org/10.7567/SSDM.2019.PS-2-05

1:00 PM - 3:00 PM

[PS-2-05] Impact of Low Temperature Formed GeO_x/Al₂O₃ Tunneling Layer on Reliability of Junctionless Poly-Ge Charge-Trapping Flash Memory Device

^○T.-Y. Chiang¹, K.-S. Chang-Liao¹, H.-K. Fang¹, P.-Y. Lin¹, W.-H. Huang², C.-H. Shen², J.-M. Shieh² (1.National Tsing Hua Univ. (Taiwan), 2.Taiwan Semiconductor Research Institute (Taiwan))

https://doi.org/10.7567/SSDM.2019.PS-2-05

2019 International Conference on Solid State Devices and Materials

[PS-2-05] Impact of Low Temperature Formed GeOx/Al2O3 Tunneling Layer on Reliability of Junctionless Poly-Ge Charge-Trapping Flash Memory Device

[PS-2-05] Impact of Low Temperature Formed GeO_x/Al₂O₃ Tunneling Layer on Reliability of Junctionless Poly-Ge Charge-Trapping Flash Memory Device