The Japan Society of Applied Physics

13:00 〜 15:00

[PS-2-05] Impact of Low Temperature Formed GeOx/Al2O3 Tunneling Layer on Reliability of Junctionless Poly-Ge Charge-Trapping Flash Memory Device

T.-Y. Chiang1, K.-S. Chang-Liao1, H.-K. Fang1, P.-Y. Lin1, W.-H. Huang2, C.-H. Shen2, J.-M. Shieh2 (1.National Tsing Hua Univ. (Taiwan), 2.Taiwan Semiconductor Research Institute (Taiwan))

https://doi.org/10.7567/SSDM.2019.PS-2-05