13:00 〜 15:00

[PS-2-14] Low Power Characteristic of HfO₂ Based RRAM Device with Insertion of Si Film

^○X. Ding¹, Y. Feng¹, W. Shen¹, L. Liu¹ (1.Peking Univ. (China))

https://doi.org/10.7567/SSDM.2019.PS-2-14