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[PS-2-14] Low Power Characteristic of HfO₂ Based RRAM Device with Insertion of Si Film

^○X. Ding¹, Y. Feng¹, W. Shen¹, L. Liu¹ (1.Peking Univ. (China))

https://doi.org/10.7567/SSDM.2019.PS-2-14