Evaluation of Carrier Recombination Lifetime in Silicon Epitaxial Layer by Open Circuit Voltage Decay Method

S. Sasaki

doi:https://doi.org/10.7567/SSDM.2019.PS-4-03

13:00 〜 15:00

[PS-4-03] Evaluation of Carrier Recombination Lifetime in Silicon Epitaxial Layer by Open Circuit Voltage Decay Method

^○S. Sasaki¹, N. Mitsugi¹, S. Samata¹, W. Manabe², M. Tsukuda², H. Y.-Kaneta², I. Omura² (1.SUMCO Corp. (Japan), 2.Kyushu Institute of Technology (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-03

2019 International Conference on Solid State Devices and Materials

[PS-4-03] Evaluation of Carrier Recombination Lifetime in Silicon Epitaxial Layer by Open Circuit Voltage Decay Method