Fabrication of 4H-SiC PiN Diodes on Substrate Grown by HTCVD Method

Y. Tokuda

doi:https://doi.org/10.7567/SSDM.2019.PS-4-04

13:00 〜 15:00

[PS-4-04] Fabrication of 4H-SiC PiN Diodes on Substrate Grown by HTCVD Method

^○Y. Tokuda¹, H. Uehigashi¹, K. Murata², H. Tsuchida² (1.DENSO CORP. (Japan), 2.Central Research Institute of Electric Power Industry (CRIEPI) (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-04

2019 International Conference on Solid State Devices and Materials

[PS-4-04] Fabrication of 4H-SiC PiN Diodes on Substrate Grown by HTCVD Method