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[PS-4-05] Numerical Study of 4H-SiC PiN Diode to Enable Forward Bias Degradation Prediction Considering BPD-TED Conversion Position in the SiC Epitaxial Wafer

^○S. Torimi^1,2, Y. Obiyama¹, M. Tsukuda¹, I. Omura¹ (1.Kyushu Inst. of Tech. (Japan), 2.Toyo Tanso, Co., Ltd (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-05