The Japan Society of Applied Physics

13:00 〜 15:00

[PS-4-05] Numerical Study of 4H-SiC PiN Diode to Enable Forward Bias Degradation Prediction Considering BPD-TED Conversion Position in the SiC Epitaxial Wafer

S. Torimi1,2, Y. Obiyama1, M. Tsukuda1, I. Omura1 (1.Kyushu Inst. of Tech. (Japan), 2.Toyo Tanso, Co., Ltd (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-05