Fermi Level Pinning at Metal/4H-SiC Contact Induced by SiC<sub>x</sub>O<sub>y</sub> Interlayer

K. Hashimoto

doi:https://doi.org/10.7567/SSDM.2019.PS-4-06

13:00 〜 15:00

[PS-4-06] Fermi Level Pinning at Metal/4H-SiC Contact Induced by SiC_xO_y Interlayer

^○K. Hashimoto¹, T. Doi¹, S. Shibayama¹, O. Nakatsuka^1,2 (1.Graduate School of Eng. Nagoya Univ. (Japan), 2.Inst. of Materials and Systems for Sustainability, Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-06

2019 International Conference on Solid State Devices and Materials

[PS-4-06] Fermi Level Pinning at Metal/4H-SiC Contact Induced by SiCxOy Interlayer

[PS-4-06] Fermi Level Pinning at Metal/4H-SiC Contact Induced by SiC_xO_y Interlayer