The Japan Society of Applied Physics

1:00 PM - 3:00 PM

[PS-4-09] Study on the Effects of Si Implantation on the Interface of 4H-SiC MOSFET

J.-Y. Jiang1, J.-Q. Hung1, P.-W. Huang1, T.-L. Wu2, C.-F. Huang1 (1.National Tsing Hua Univ. (Taiwan), 2.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2019.PS-4-09