The Japan Society of Applied Physics

13:00 〜 15:00

[PS-4-11] Improved vertical Schottky barrier diodes characteristics by eliminating killer defects in heavily B-doped diamond substrates

A. Kobayashi1, S. Ohmagari2, D. Takeuchi2, H. Umezawa2, T. Saito1 (1.Osaka Prefecture Univ. (Japan), 2.AIST (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-11