1:00 PM - 3:00 PM
[PS-4-11] Improved vertical Schottky barrier diodes characteristics by eliminating killer defects in heavily B-doped diamond substrates
○A. Kobayashi1, S. Ohmagari2, D. Takeuchi2, H. Umezawa2, T. Saito1
(1.Osaka Prefecture Univ. (Japan), 2.AIST (Japan))
https://doi.org/10.7567/SSDM.2019.PS-4-11