Characterization of defects in diamond PiN diodes by electron beam induced current

H. Umezawa

doi:https://doi.org/10.7567/SSDM.2019.PS-4-13

1:00 PM - 3:00 PM

[PS-4-13] Characterization of defects in diamond PiN diodes by electron beam induced current

^○H. Umezawa^1,2, T. Shimaoka³, K. Driche⁴, E. Gheeraert^2,5, S. Koizumi³, D. Takeuchi¹ (1.AIST (Japan), 2.Univ. Grenoble Alpes, CNRS, Grenoble INP, Inst. Neel (France), 3.NIMS (Japan), 4.DiamFab (France), 5.Univ. Tsukuba (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-13

2019 International Conference on Solid State Devices and Materials

[PS-4-13] Characterization of defects in diamond PiN diodes by electron beam induced current