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[PS-4-16] Effects of Deep Level States Generated by Mg-Ion Implantation on Electrical Properties of GaN MOS Diodes before Activation Annealing

^○R. Kamoshida¹, S. Murai¹, M. Akazawa¹ (1.Hokkaido Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-16