A Method for Accurate Extracting the Properties of Border Traps in Lateral GaN Power MOSFET with a Compact Distributed Network Model

R. Yin

doi:https://doi.org/10.7567/SSDM.2019.PS-4-19

1:00 PM - 3:00 PM

[PS-4-19] A Method for Accurate Extracting the Properties of Border Traps in Lateral GaN Power MOSFET with a Compact Distributed Network Model

^○R. Yin¹, Y. Li¹, W. Lin², C.P. Wen¹, Y.L. Hao¹, Y. Fu¹, M. Wang¹ (1.Inst. of Microelectronics, Peking Univ. (China), 2.School of Physics, Peking Univ. (China))

https://doi.org/10.7567/SSDM.2019.PS-4-19

2019 International Conference on Solid State Devices and Materials

[PS-4-19] A Method for Accurate Extracting the Properties of Border Traps in Lateral GaN Power MOSFET with a Compact Distributed Network Model