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[PS-4-20] Analysis of Inversion Channel Mobility in a GaN-based MOSFET

^○D. Kikuta¹, T. Narita¹, T. Kachi² (1.Toyota Central R&D Labs., Inc. (Japan), 2.Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-20