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[PS-4-21] Estimation of post-deposition annealing effects on electrical properties of ALD-SiO₂/AlGaN/GaN MIS-HEMTs

^○S. Yokoi¹, T. Kubo¹, T. Egawa¹ (1.Nagoya Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-21